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BUV25

Part Number	BUV25
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Power Transistor BUV25 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.)@IC= 4A ·...
Datasheet	BUV25 PDF File

Overview

...High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min.
) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power switching applications in military and industrial equipments.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 500 V 500 V 7 V 15 A 20 A 3 A 250 W 200 ℃ -65~200 ℃ THERMAL C...

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