DatasheetsPDF.com

2SC2656

Part Number	2SC2656
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 19, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Swi...
Datasheet	2SC2656 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperatur...

Similar Datasheet

2SC2603 NPN SILICON TRANSISTOR - Micro Electronics
2SC2608 NPN Transistor - INCHANGE
2SC2608 SILICON POWER TRANSISTOR - SavantIC
2SC2610 Silicon NPN Triple Diffused Transistor - Hitachi Semiconductor
2SC2610 Silicon NPN Triple Diffused Transistor - Renesas
2SC2611 NPN Transistor - INCHANGE
2SC2611 Silicon NPN Transistor - Hitachi Semiconductor
2SC2611 SILICON POWER TRANSISTOR - SavantIC
2SC2611 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC2612 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)