DatasheetsPDF.com

2SD325

INCHANGE
Part Number 2SD325
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Power Transistor 2SD325 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Low Co...
Datasheet PDF File 2SD325 PDF File

2SD325
2SD325

Overview
isc Silicon NPN Power Transistor 2SD325 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0V(Max) @IC= 1.
5A ·Complement to Type 2SB511 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
·Recommended for 5 watts AF power amplifier output use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Peak Collector Power Dissipati...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)