DatasheetsPDF.com

2SD986

INCHANGE
Part Number 2SD986
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 21, 2020
Detailed Description isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min.) ·D...
Datasheet PDF File 2SD986 PDF File

2SD986
2SD986

Overview
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min.
) ·DC Current Gain- : hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage ·Complement to Type 2SB795 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·They are suitable for use to operate from IC without predriver, such as hammer driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Pulse 3.
0 A IB Base Current Collector Powe...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)