isc
Silicon NPN
Power Transistor
BD313
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 4A ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 5A ·Complement to Type BD314 ·Minimum Lot-to-Lot variations...