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BD375

Part Number	BD375
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@ IC= 1A ·Complement to Type BD376/378/38...
Datasheet	BD375 PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@ IC= 1A ·Complement to Type BD376/378/380 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD375 50 VCBO Collector-Base Voltage BD377 75 V BD379 100 BD375 45 VCEO Collector-Emitter Voltage BD377 60 V BD379 80 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 25 W ...

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