DatasheetsPDF.com

BDT41A

INCHANGE
Part Number BDT41A
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 22, 2020
Detailed Description isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter...
Datasheet PDF File BDT41A PDF File

BDT41A
BDT41A

Overview
isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.
3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C ·Complement to Type BDT42/42A/42B/42C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT41 80 BDT41A 100 VCBO Collector-Base Voltage BDT41B 120 BDT41C 140 BDT41 40 VCEO Collector-Emitter Voltage BDT41A 60 BDT41B 80 BDT41C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 6 ICM Collector Current-Peak 10 IB Base Current 3 PC Collector Power Dissipation TC=25℃ 65 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction t...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)