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BDT41C

Part Number	BDT41C
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 22, 2020
Detailed Description	isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter...
Datasheet	BDT41C PDF File

Overview

isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.
3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C ·Complement to Type BDT42/42A/42B/42C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT41 80 BDT41A 100 VCBO Collector-Base Voltage BDT41B 120 BDT41C 140 BDT41 40 VCEO Collector-Emitter Voltage BDT41A 60 BDT41B 80 BDT41C 100 VEBO Emitter-Base Voltage 5 IC Collector...

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