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BDX33A

Part Number	BDX33A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor BDX33A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V...
Datasheet	BDX33A PDF File

Overview

isc Silicon NPN Darlington Power Transistor BDX33A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 2.
5V(Max.
)@ IC= 4A ·Complement to Type BDX34A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
25 A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
78 ℃/W isc website： www.
iscsemi.
com 1...

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