isc
Silicon NPN
Power Transistor
BDY39
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=25-100@IC = 4A ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 0.7V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device
performa...