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BDY43

Part Number	BDY43
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor BDY43 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) ·DC Cu...
Datasheet	BDY43 PDF File

Overview

isc Silicon NPN Power Transistor BDY43 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.
) ·DC Current Gain- : hFE=20(Min.
)@IC = 1A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max)@ IC = 5A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulator ·Inverter ·Switching mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCES Collector-Emitter Voltage 600 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A I...

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