isc
Silicon NPN
Power Transistor
BDY45
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 250V(Min.) ·DC Current Gain-
: hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.5V(Max)@ IC = 15A ·High
Switching Speed ·M...