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BDY90

Part Number	BDY90
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 30-120@IC= 5A ·Excellent Safe Operating Area...
Datasheet	BDY90 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC≤25℃ TJ Junction Temperat...

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