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BDY90A

Part Number	BDY90A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 23, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS...
Datasheet	BDY90A PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators and switching control amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junct...

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