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MJ901

INCHANGE
Part Number MJ901
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 27, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor MJ901 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(M...
Datasheet PDF File MJ901 PDF File

MJ901
MJ901

Overview
isc Silicon PNP Darlington Power Transistor MJ901 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.
) ·High DC Current Gain- : hFE= 1000(Min.
)@IC= -3A ·Low Collector Saturation Voltage- : VCE (sat)= -2.
0V(Max.
)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -8 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -0.
1 A 90 W -65~+200 ℃ Tstg Storage Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
94 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademarkrk isc Silicon PNP Darlington Powe...


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