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MJ900

Comset Semiconductors
Part Number MJ900
Manufacturer Comset Semiconductors
Description (MJ900 / MJ901) COMPLEMENTARY POWER DARLINGTONS
Published Dec 11, 2012
Detailed Description MJ900 – MJ901 PNP COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transist...
Datasheet PDF File MJ900 PDF File

MJ900
MJ900

Overview
MJ900 – MJ901 PNP COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case.
They are intended for use in power linear and switching applications.
Their complementary NPN types are the MJ1000 and MJ1001 respectively.
Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC IB PT TJ TS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Ratings MJ900 MJ901 MJ900 MJ901 MJ900 MJ901 MJ900 MJ901 MJ900 MJ901 MJ900 MJ901 MJ900 MJ901 MJ900 MJ901 Value -60 -80 -60 -80 -5.
0 -8.
0 -0.
1 90 0.
515 -65 to +200 Unit V V V A A W W/°C °C IB=0 http://www.
DataSheet4U.
net/ IC(RMS) @ TC < 25° Derate above 25°C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.
94 Unit °C/W 29/10/2012 COMSET SEMICONDUCTORS 1|3...


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