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MJF15030

INCHANGE
Part Number MJF15030
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 27, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V(Min) · High DC cu...
Datasheet PDF File MJF15030 PDF File

MJF15030
MJF15030


Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V(Min) · High DC current gain - : hFE = 40 (Min) @IC= 3.
0 A : hFE = 20 (Min) @IC= 4.
0 A ·Complement to Type MJF15031 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 150 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 8 ICM Collector Current-Peak 16 IB Base Current 2 Collector Power Dissipation PC @Ta=25℃ Collector Power Dissipation @TC=25℃ 2 36 Tj Junction Temperature 150 Tstg Storage Temperature -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.
5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W MJF15030 isc Website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJF15030 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.
1A VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 2V ICBO Collector Cutoff Current VCB= 150V; IE= 0 ICEO Collector Cutoff Current VCE= 150V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.
1A ; VCE= 2V hFE-2 DC Current Gain IC= 2A ; VCE= 2V hFE-3 DC Current Gain IC= 3A ; VCE= 2V hFE-4 DC Current Gain IC= 4A ; VCE= 2V fT Current Gain-Bandwidth Product IC= 0.
5A;VCE= 10V; ftest= 10MHz MIN MAX UNIT 150 V 0.
5 V 1.
0 V 10 μA 0.
1 mA 10 μA 40 40 40 20 20 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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