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2SB616

Part Number	2SB616
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB616 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR...
Datasheet	2SB616 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB616 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -100V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
0(Max.
) @IC= -2A ·With TO-3PN package ·Complement to Type 2SD586 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 150 ℃ ...

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