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2SC1913

Part Number	2SC1913
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1913 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(B...
Datasheet	2SC1913 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1913 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150(V)(Min.
) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency high power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
0 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is r...

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