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2SC2615

Part Number	2SC2615
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2615 DESCRIPTION ·Low Collector Saturation Voltage ·High Co...
Datasheet	2SC2615 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2615 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage ,high speed and high power Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Pulse 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Tempera...

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