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2SC5358

Part Number	2SC5358
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5358 DESCRIPTION ·High Current Capability ·High Power Dissi...
Datasheet	2SC5358 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5358 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1986 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5358 ELECTRICAL CHARACTERI...

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