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2SC5584

Part Number	2SC5584
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor isc Product Specification 2SC5584 DESCRIPTION ·Silicon NPN triple diffusion mesa type...
Datasheet	2SC5584 PDF File

Overview

isc Silicon NPN Power Transistor isc Product Specification 2SC5584 DESCRIPTION ·Silicon NPN triple diffusion mesa type ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 150 W 150 ℃ Tstg Storag...

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