DatasheetsPDF.com

2SD343

Part Number	2SD343
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD343 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(B...
Datasheet	2SD343 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD343 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
6V(Max) @IC= 2.
0A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 70 V 40 ...

Similar Datasheet

2SD30 NPN Transistor - Sanyo Semiconductor
2SD310 NPN Transistor - INCHANGE
2SD311 Silicon NPN Power Transistor - Inchange Semiconductor
2SD312 NPN Transistor - INCHANGE
2SD313 NPN Transistor - UTC
2SD313 SILICON POWER TRANSISTOR - SavantIC
2SD313 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SD313 NPN Silicon Epitaxial Power Transistor - WEITRON
2SD313 NPN Transistor - Dc Components
2SD313 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)