DatasheetsPDF.com

2SD347

Part Number	2SD347
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD347 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(B...
Datasheet	2SD347 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD347 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0V(Max) @IC= 3.
0A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power...

Similar Datasheet

2SD30 NPN Transistor - Sanyo Semiconductor
2SD310 NPN Transistor - INCHANGE
2SD311 Silicon NPN Power Transistor - Inchange Semiconductor
2SD312 NPN Transistor - INCHANGE
2SD313 NPN Transistor - UTC
2SD313 SILICON POWER TRANSISTOR - SavantIC
2SD313 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SD313 NPN Silicon Epitaxial Power Transistor - WEITRON
2SD313 NPN Transistor - Dc Components
2SD313 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)