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2SD962

INCHANGE
Part Number 2SD962
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD962 DESCRIPTION ·High Collector-Emitter Breakdo...
Datasheet PDF File 2SD962 PDF File

2SD962
2SD962

Overview
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD962 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) ·High DC Current Gain ·High Reliability ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for series regulators ,color TV, power supplies and similar devices applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD962 ELECTRICAL CHARACTERISTICS TC=25℃ unl...


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