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2SD972

Part Number	2SD972
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD972 DESCRIPTION ·Collector-Emitter Breakdown Vo...
Datasheet	2SD972 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD972 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 50V(Min) ·High DC Current Gain ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak 6 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Juncti...

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