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2SD1783

Part Number	2SD1783
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1783 DESCRIPTION ·Collector-Emitter Breakdown V...
Datasheet	2SD1783 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1783 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 2A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IB Base Current-Continuous Collector Power Dissipatio...

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