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BD355

Part Number	BD355
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor BD355 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR...
Datasheet	BD355 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD355 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Saturation Voltage- : VCE(sat)= -1.
0V(Max)@ IC = -2.
0A ·Excellent Safe Operating Area ·Complement to Type BD354 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -4 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor BD355 ELECTRICAL CHARACTERISTICS TC=25℃ ...

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