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BD368

Part Number	BD368
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor BD368 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR...
Datasheet	BD368 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD368 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Excellent Safe Operating Area ·Complement to Type BD369 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A IB Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ ...

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