DatasheetsPDF.com

IPD530N15N3

Infineon
Part Number IPD530N15N3
Manufacturer Infineon
Description Power Transistor
Published Oct 2, 2020
Detailed Description IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level ...
Datasheet PDF File IPD530N15N3 PDF File

IPD530N15N3
IPD530N15N3

Overview
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 53 mW 21 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen Free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G Package Marking PG-TO263-3 530N15N PG-TO252-3 530N15N PG-TO262-3 530N15N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO220-3 530N15N Value Unit Continuous drain current ID T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=18 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 21 A 15 84 60 mJ ±20 V 68 W -55 .
.
.
175 °C 55/175/56 Rev.
2.
6 page 1 2013-07-09 IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, junction ambient R thJA minimal footprint - 6 cm2 cooling area3) - - 2.
2 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 150 - Gate threshold voltage V GS(th) V DS=V GS, I D=35 µA 2 3 Zero gate voltage drain current I DSS V DS=120 V, V GS=0 V, T j=25 °C - 0.
1 -V 4 1 µA Gate-source leakage current V DS=120 V, V GS=0 V, T j=125 °C - I GSS V GS=20 V, V DS=0 V - 10 100 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=18 A - 44 53 mW Gate re...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)