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IPD530N15N3G

Infineon
Part Number IPD530N15N3G
Manufacturer Infineon
Description Power Transistor
Published Dec 9, 2013
Detailed Description IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level ...
Datasheet PDF File IPD530N15N3G PDF File

IPD530N15N3G
IPD530N15N3G

Overview
IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 53 mW 21 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen Free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G Package Marking PG-TO263-3 530N15N PG-TO252-3 530N15N PG-TO262-3 530N15N Maximum ratings, at T j=25 °C, unless otherwise ...


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