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IPI040N06N3

Infineon
Part Number IPI040N06N3
Manufacturer Infineon
Description Power Transistor
Published Oct 2, 2020
Detailed Description Type OptiMOS™3 Power-Transistor Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R ...
Datasheet PDF File IPI040N06N3 PDF File

IPI040N06N3
IPI040N06N3


Overview
Type OptiMOS™3 Power-Transistor Features • for sync.
rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • N-channel, normal level • Avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB037N06N3 G IPI040N06N3 G IPB037N06N3 G IPI040N06N3 G Product Summary IPP040N06N3 G V DS R DS(on),max (SMD) ID 60 V 3.
7 mΩ 90 A previous engineering sample codes: IPP04xN06N IPI04xN06N IPB04xN06N IPP040N06N3 G Package Marking PG-TO263-3 037N06N PG-TO262-3 040N06N PG-TO220-3 040N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID T C=25 °C2) 90 A T C=100 °C 90 Pulsed drain current3) I D,pulse T C=25 °C 360 Avalanche energy, single pulse E AS I D=90 A, R GS=25 Ω 165 mJ Gate source voltage V GS ±20 V Power dissipation P tot T C=25 °C 188 W Operating and storage temperature T j, T stg -55 .
.
.
175 °C IEC climatic category; DIN IEC 68-1 55/175/56 www.
DataShe1e)Jt4-SUT.
cDo2m0 and JESD22 2) Current is limited by bondwire; with an R thJC=0.
8 K/W the chip is able to carry 162 A.
3) See figure 3 4) Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Rev.
1.
03 page 1 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm² cooling area4) min.
Values typ.
Unit max.
- - 0.
8 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 3 -V 4 Zero gate ...


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