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IPI040N06N3G

Infineon Technologies AG
Part Number IPI040N06N3G
Manufacturer Infineon Technologies AG
Description Power-Transistor
Published Feb 17, 2011
Detailed Description Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync. rectification, drive...
Datasheet PDF File IPI040N06N3G PDF File

IPI040N06N3G
IPI040N06N3G

Overview
Type IPB037N06N3 G ™ IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Features • for sync.
rectification, drives and dc/dc SMPS • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • N-channel, normal level • Avalanche rated • Qualified according to JEDEC1) for target applications • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPB037N06N3 G IPI040N06N3 G Product Summary V DS R DS(on),max (SMD) ID 60 3.
7 90 V mΩ A previous engineering sample codes: IPP04xN06N IPI04xN06N IPB04xN06N IPP040N06N3 G Package Marking PG-TO263-3 037N06N PG-TO262-3 040N06N PG-TO220-3 040N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) www.
DataSheet4U.
com J-STD20 and JESD22 2) 3) 4) Value 90 90 360 165 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=90 A, R GS=25 Ω mJ V W °C T C=25 °C 188 -55 .
.
.
175 55/175/56 Current is limited by bondwire; with an R thJC=0.
8 K/W the chip is able to carry 162 A.
See figure 3 2 Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Rev.
1.
03 page 1 2009-12-17 IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G Parameter Symbol Conditions min.
Values typ.
max.
Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm² cooling area 4) 0.
8 62 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=90 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage curr...


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