DatasheetsPDF.com

TK13A65U

INCHANGE
Part Number TK13A65U
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK13A65U，ITK13A65U ·FEATURES ·Low drain-source on-resistance: RD...
Datasheet PDF File TK13A65U PDF File

TK13A65U
TK13A65U

Overview
iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK13A65U，ITK13A65U ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.
32Ω (typ.
) ·Low leakage current: IDSS = 100μA (max) (VDS = 650 V) ·Enhancement mode: Vth = 3.
0 to 5.
0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 26 PD Total Dissipation @TC=25℃ 40 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.
125 62.
5 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Tr...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)