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TK13A65D

Toshiba Semiconductor
Part Number TK13A65D
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 20, 2014
Detailed Description TK13A65D MOSFETs Silicon N-Channel MOS (π-MOS) TK13A65D 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK13A65D PDF File

TK13A65D
TK13A65D


Overview
TK13A65D MOSFETs Silicon N-Channel MOS (π-MOS) TK13A65D 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.
4 Ω (typ.
) High forward transfer admittance: |Yfs| = 7.
5 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetitive avala...



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