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TK35E08N1

INCHANGE
Part Number TK35E08N1
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK35E08N1，ITK35E08N1 ·FEATURES ·Low drain-source on-resistance:...
Datasheet PDF File TK35E08N1 PDF File

TK35E08N1
TK35E08N1

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK35E08N1，ITK35E08N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤12.
2mΩ.
(VGS = 10 V) ·Enhancement mode: Vth =2.
0 to 4.
0V (VDS = 10 V, ID=0.
3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 55 IDM Drain Current-Single Pulsed 116 PD Total Dissipation @TC=25℃ 72 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THER...


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