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TK35E08N1

Toshiba Semiconductor
Part Number TK35E08N1
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 10, 2014
Detailed Description TK35E08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK35E08N1 1. Applications • Switching Voltage Regulators 2. Feature...
Datasheet PDF File TK35E08N1 PDF File

TK35E08N1
TK35E08N1

Overview
TK35E08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK35E08N1 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.
0 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
3 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 1 ms) (Tc = 25) (Note 3) (Tc = 25) (Note 1) (Note 1), (Note 2) (Note 1) Symbol VDSS VGSS ID ID IDP PD EAS IAR Tch Tstg Rating 80 ±20 55 35 116 72 38 35 150 -55 to 150 W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 1 2012-04 2014-06-30 Rev.
4.
0 TK35E08N1 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 1.
72 83.
3 Unit /W Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted with heatsink so that Rth(ch-a) becomes 4.
16/W.
Note 3: VDD = 64 V, Tch = 25 (initial), L = 24.
1 µH, IAR = 35 A Note: This transistor is sensitive to electrostatic discharge...


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