DatasheetsPDF.com

TK100E08N1

INCHANGE
Part Number TK100E08N1
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 4, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E08N1，ITK100E08N1 ·FEATURES ·Low drain-source on-resistanc...
Datasheet PDF File TK100E08N1 PDF File

TK100E08N1
TK100E08N1

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E08N1，ITK100E08N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.
2mΩ.
(VGS = 10 V) ·Enhancement mode: Vth =2.
0 to 4.
0V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 568 PD Total Dissipation @TC=25℃ 255 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.
49 83.
3 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E08...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)