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TK100E08N1

Toshiba Semiconductor
Part Number TK100E08N1
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 10, 2014
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low d...
Datasheet PDF File TK100E08N1 PDF File

TK100E08N1
TK100E08N1

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E08N1 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 2.
6 mΩ (typ.
) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (3) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1.
0 mA) 3.
Packaging and Internal Circuit TK100E08N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Silicon limit) (t = 1 ms) (Tc = 25) (Note 1,2) (Note 1,3) (Note 1) (Note 4) VDSS VGSS ID ID IDP PD EAS IAR Tch Tstg 80 V ±20 214 A 100 568 255 W 278 mJ 100 A 150  -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temper...


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