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IPB65R190C6

Part Number	IPB65R190C6
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 5, 2020
Detailed Description	Isc N-Channel MOSFET Transistor IPB65R190C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate char...
Datasheet	IPB65R190C6 PDF File

Overview

Isc N-Channel MOSFET Transistor IPB65R190C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 20.
2 12.
8 66 PD Total Dissipation @TC=25℃ 151 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-...

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