DatasheetsPDF.com

IPB65R190C7

Part Number	IPB65R190C7
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 28, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPB65R190C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement ...
Datasheet	IPB65R190C7 PDF File

Overview

isc N-Channel MOSFET Transistor IPB65R190C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD Total Dissipation @TC=25℃ 72 Tj Max.
Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARA...

Similar Datasheet

IPB65R190C6 Power Transistor - Infineon Technologies
IPB65R190C6 N-Channel MOSFET - INCHANGE
IPB65R190C7 MOSFET - Infineon
IPB65R190C7 N-Channel MOSFET - INCHANGE
IPB65R190CFD CFD2 Power Transistor - Infineon Technologies
IPB65R190CFD N-Channel MOSFET - INCHANGE
IPB65R190CFDA CFDA Power Transistor - Infineon Technologies
IPB65R190E6 Power Transistor - Infineon Technologies
IPB65R190E6 N-Channel MOSFET - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)