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IPD068N10N3

Part Number	IPD068N10N3
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.8mΩ ·E...
Datasheet	IPD068N10N3 PDF File

Overview

isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.
8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 360 PD Total Dissipation @TC=25℃ 150 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal re...

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