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IPD068N10N3

Infineon
Part Number IPD068N10N3
Manufacturer Infineon
Description Power-Transistor
Published Oct 8, 2020
Detailed Description IPD068N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product ...
Datasheet PDF File IPD068N10N3 PDF File

IPD068N10N3
IPD068N10N3

Overview
IPD068N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPD068N10N3 G 100 V 6.
8 mW 90 A Package Marking PG-TO252-3 068N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C...


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