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IPD135N03L

Part Number	IPD135N03L
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 8, 2020
Detailed Description	isc N-Channel MOSFET Transistor IPD135N03L, IIPD135N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.5mΩ ·E...
Datasheet	IPD135N03L PDF File

Overview

isc N-Channel MOSFET Transistor IPD135N03L, IIPD135N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤13.
5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 210 PD Total Dissipation @TC=25℃ 31 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rt...

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