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IPP60R199CP

INCHANGE
Part Number IPP60R199CP
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 10, 2020
Detailed Description isc N-Channel MOSFET Transistor IPP60R199CP，IIPP60R199CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.199Ω...
Datasheet PDF File IPP60R199CP PDF File

IPP60R199CP
IPP60R199CP

Overview
isc N-Channel MOSFET Transistor IPP60R199CP，IIPP60R199CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
199Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 16 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 139 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYM...


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