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IPP60R199CP

Infineon Technologies
Part Number IPP60R199CP
Manufacturer Infineon Technologies
Description Power Transistor
Published Aug 1, 2011
Detailed Description CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High ...
Datasheet PDF File IPP60R199CP PDF File

IPP60R199CP
IPP60R199CP

Overview
CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ IPP60R199CP 650 V 0.
199 Ω 32 nC PG-TO220 CoolMOS CP is specially designed for: • Hard switching topologies, for Server and Telecom Type IPP60R199CP Package PG-TO220 Ordering Code SP000084278 Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Symbol Conditions ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 °C I D=6.
6 A, V DD=50 V Avalanche energy, repetitive t 2),3) AR E AR I D=6.
6 A, V DD=50 V Avalanche current, repetitive t 2),3) AR I AR MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting to...


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