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IRFB4110G

Part Number	IRFB4110G
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFB4110G， IIRFB4110G ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·En...
Datasheet	IRFB4110G PDF File

Overview

isc N-Channel MOSFET Transistor IRFB4110G， IIRFB4110G ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.
5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 180 IDM Drain Current-Single Pulsed 670 PD Total Dissipation @TC=25℃ 370 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS ...

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