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IRFB4115

International Rectifier
Part Number IRFB4115
Manufacturer International Rectifier
Description Power MOSFET
Published May 23, 2022
Detailed Description IRFB4115PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High S...
Datasheet PDF File IRFB4115 PDF File

IRFB4115
IRFB4115

Overview
IRFB4115PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G HEXFET® Power MOSFET D VDSS RDS(on) typ.
max.
S ID (Silicon Limited) 150V 9.
3mΩ 11mΩ 104A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead Free l RoHS Compliant, Halogen-Free D G Gate S D G TO-220AB D Drain S Source Base Part Number IRFB4115PbF Package Type TO-220 Standard Pack Form Quantity Tube 50 Orderable Part Number IRFB4115PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage e Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) d Single Pulse Avalanche Energy Thermal Resistance Symbol RθJC RθCS RθJA Parameter j Junction-to-Case Case-to-Sink, Flat Greased Surface ij Junction-to-Ambient Max.
104 74 420 380 2.
5 ± 20 18 -55 to + 175 300 x x 10lb in (1.
1N m) 830 Typ.
––– 0.
50 ––– Max.
0.
40 ––– 62 Units A W W/°C V V/ns °C mJ Units °C/W 1 www.
irf.
com © 2014 International Rectifier Submit Datasheet Feedback November 11, 2014 IRFB4115PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current 150 ––– ––– ––– 0.
18 9.
3 ––– ––– 11 V VGS = 0V, ID = 250µA ™ V/°C Reference to 25°C, ID = 3.
5mA f m...


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