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IRFB4229

Part Number	IRFB4229
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 12, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFB4229，IIRFB4229 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤46mΩ ·Enhanc...
Datasheet	IRFB4229 PDF File

Overview

isc N-Channel MOSFET Transistor IRFB4229，IIRFB4229 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤46mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 46 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 330 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -40~175 UNIT V V A A W ℃ ℃ ·THERMAL ...

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