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IRFP4137

INCHANGE
Part Number IRFP4137
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 12, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFP4137，IIRFP4137 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤69mΩ ·Enhance...
Datasheet PDF File IRFP4137 PDF File

IRFP4137
IRFP4137

Overview
isc N-Channel MOSFET Transistor IRFP4137，IIRFP4137 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤69mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 38 IDM Drain Current-Single Pulsed 152 PD Total Dissipation @TC=25℃ 341 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.
44 40 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFP4137，IIRFP4137 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN ...


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